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preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 1 general description the ap2822 is an integrated high-side power switch that consists of n-channel mosfet, charge pump, over current & temperature and other related protection circuits. the switch?s low r ds(on) , 85m ? , is designed to meet usb voltage drop requirements. the ic includes soft-start to limit inrush current, over-current protection, load short protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. under voltage lockout (uvlo) function is used to ensure the device remain off unless there is a valid input voltage present. a flag output is available to indicate fault conditions to the local usb controller. the ap2822 is available in the standard package of sot-23-5. applications ? usb power management ? usb bus/self powered hubs ? hot-plug power supplies ? battery-charger circuits ? notebooks, motherboard pcs features ? low mosfet on resistance: 85m ? ? compliant to usb specifications ? available 4 versions of continuous load: 0.5a/1.0a/1.5a/2.0a ? logic level enable pin: available with active-high or active-low version ? operating voltage range: 2.7v to 5.5v ? low supply current: 68a (typ.) ? low shutdown current: 1.0a (max) ? under-voltage lockout ? soft start-up ? over-current protection ? over temperature protection ? load short protection with fold-back ? no reverse current when power off ? deglitched flag output with open drain ? with output shutdown pull-low resistor figure 1. package type of ap2822 sot-23-5
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 2 pin configuration k/ka/kb/ke package sot-23-5 k ka kb ke figure 2. pin configurat ion of ap2822 (top view) 1 2 34 5 flag gnd en vout vin 1 2 3 4 5 gnd flag vout vin en 1 2 3 4 5 gnd vin vout en vout 1 2 3 4 5 gnd flag en vout vin
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 3 pin descriptions pin number pin name function 1(k) flag fault flag pin, output with open drain, need a pull-up resistor in application, active low to indicate ocp or otp 3(ka/ke) 2 gnd ground 3(k) en chip enable control input, active low or high 1(ka) 4(kb/ke) 4(k/ka) vin supply input pin 3(kb) 5(ke) 5(k/ka) vout switch output voltage 1,5(kb) 1(ke)
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 4 functional block diagram clock band gap reference uvlo gate control over current limiting thermal sense flag deglitch logic current sense cmp vin vout gnd en 3(1){4}[4] 2(2){2}[2] 4(4){3}[5] 5(5){1,5}[1] flag shutdown signal 1(3)[3] a(b){c}[d] a: sot-23-5(k package) b: sot-23-5(ka package) c: sot-23-5(kb package) d: sot-23-5(ke package) figure 3. functional block diagram of ap2822
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 5 ordering information ap2822 - circuit type package temperature range condition part number marking id packing type sot-23-5 -40 to 85 c active high (continuous 0.5a) ap2822aktr-g1 gcq tape & reel active low (continuous 0.5a) ap2822bktr-g1 gcr tape & reel active high (continuous 1.0a) AP2822CKTR-G1 gcs tape & reel active low (continuous 1.0a) ap2822dktr-g1 gct tape & reel active high (continuous 1.5a) ap2822ektr-g1 gcu tape & reel active low (continuous 1.5a) ap2822fktr-g1 gcv tape & reel active high (continuous 2.0a) ap2822gktr-g1 gcw tape & reel active low (continuous 2.0a) ap2822hktr-g1 gcz tape & reel package k/ka/kb/ke: sot-23-5 condition a: active high (continuous 0.5a) b: active low (continuous 0.5a) c: active high (continuous 1.0a) d: active low (continuous 1.0a) e: active high (continuous 1.5a) f: active low (continuous 1.5a) g: active high (continuous 2.0a) h: active low (continuous 2.0a) g1: green tr: tape & reel
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 6 ordering information (continued) package temperature range condition part number marking id packing type sot-23-5 -40 to 85 c active high (continuous 0.5a) ap2822akatr-g1 gdq tape & reel active low (continuous 0.5a) ap2822bkatr-g1 gdr tape & reel active high (continuous 1.0a) ap2822ckatr-g1 gds tape & reel active low (continuous 1.0a) ap2822dkatr-g1 gdt tape & reel active high (continuous 1.5a) ap2822ekatr-g1 gdu tape & reel active low (continuous 1.5a) ap2822fkatr-g1 gdv tape & reel active high (continuous 2.0a) ap2822gkatr-g1 gdw tape & reel active low (continuous 2.0a) ap2822hkatr-g1 gdz tape & reel sot-23-5 -40 to 85 c active high (continuous 0.5a) ap2822akbtr-g1 gla tape & reel active low (continuous 0.5a) ap2822bkbtr-g1 glb tape & reel active high (continuous 1.0a) ap2822ckbtr-g1 glc tape & reel active low (continuous 1.0a) ap2822dkbtr-g1 gld tape & reel active high (continuous 1.5a) ap2822ekbtr-g1 gle tape & reel active low (continuous 1.5a) ap2822fkbtr-g1 glf tape & reel active high (continuous 2.0a) ap2822gkbtr-g1 glg tape & reel active low (continuous 2.0a) ap2822hkbtr-g1 glh tape & reel
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 7 ordering information (continued) package temperature range condition part number marking id packing type sot-23-5 -40 to 85 c active high (continuous 0.5a) ap2822aketr-g1 gli tape & reel active low (continuous 0.5a) ap2822bketr-g1 glj tape & reel active high (continuous 1.0a) ap2822cketr-g1 glk tape & reel active low (continuous 1.0a) ap2822dketr-g1 gll tape & reel active high (continuous 1.5a) ap2822eketr-g1 glm tape & reel active low (continuous 1.5a) ap2822fketr-g1 gln tape & reel active high (continuous 2.0a) ap2822gketr-g1 glo tape & reel active low (continuous 2.0a) ap2822hketr-g1 glp tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green.
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 8 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.0 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc thermal resistance (junction to ambient) ja tbd o c / w esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.7 5.5 v operating ambient temperature range t a -40 85 c
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 9 electrical characteristics (v in =5.0v, c in =2.2f, c out =1.0f, typical t a =25c, unless otherwise specified) parameter symbol condition min typ max unit supply voltage v in 2.7 5.5 v switch on resistance r ds(on) v in =5.0v, i out =2.0a 85 110 m ? current limit i limit ap2822a/b(0.5a) , v out =4.0v 0.7 1.0 1.4 a ap2822c/d(1.0a), v out =4.0v 1.1 1.5 2.1 ap2822e/f(1.5a), v out =4.0v 1.65 2.2 2.8 ap2822g/h(2.0a), v out =4.0v 2.2 2.7 3.2 supply current i supply v in =5.0v, no load 68 95 a fold-back short current i short ap2822 a/b/c/d, v out =0v 0.7 a ap2822 e/f/g/h, v out =0v 1.1 shutdown supply current i shutdown chip disable, shutdown mode 0.1 1.0 a enable high input threshold v enh 1.6 5.5 v enable low input threshold v enl 0 1.0 v enable pin input current i en force 0v to 5.0v at en pin -1.0 1.0 a under voltage lockou t threshold voltage v uvlo v in increasing from 0v 2.2 2.5 3.0 v under voltage hysteresis v uvlohy 0.2 v reverse current i reverse chip disable, v out >v in 0.1 1.0 a output pull low resistance after shutdown r discharge 100 200 ? output turn-on time t on from enable active to 90% o f output 500 s flag pin delay time t dflg from over current fault condition to flag active 5 10 15 ms flag pin low voltage v flg i sink =5.0ma 35 70 mv flag pin leakage current i leakage flag disable, force 5.0v 1.0 a thermal shutdown temperature t otsd 150 o c thermal shutdown hysteresis t hyotsd 30
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 10 typical performance characteristics figure 4. supply current vs. ambient temperature figure 5. supply current vs. supply voltage figure 6. r ds(on) vs. ambient temperature figure 7. r ds(on) vs. supply voltage -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 10 20 30 40 50 60 70 80 90 100 supply current ( a) v in =5v enable active no load ambient temperature ( o c) 1.01.52.02.53.03.54.04.55.05.5 -10 0 10 20 30 40 50 60 70 80 90 100 supply current ( a) supply voltage (v) t a =-40 o c t a =25 o c t a =85 o c enable active -40-20 0 20406080 0 20 40 60 80 100 120 140 160 180 200 i out =1.0a r ds(on) (m ) ambient temperature ( o c) v in =5.0v v in =3.3v 3.0 3.5 4.0 4.5 5.0 5.5 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 t a =-40 o c t a =25 o c t a =85 o c i out =1.0a r ds(on) (m ) supply voltage (v)
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) figure 8. current limit vs. supply voltage figure 9. current limit vs. ambient temperature figure 10. current limit vs. supply voltage figure 11. current limit vs. ambient temperature 3.0 3.5 4.0 4.5 5.0 5.5 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 for ap2822c/d t a =-40 o c t a =25 0 c t a =85 0 c current limit (a) supply voltage (v) 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 for ap2822a/b current limit (a) supply voltage (v) t a = -40 o c t a = 25 o c t a = 85 o c -40-20 0 20406080 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 for ap2822a/b current limit (a) ambient temperature ( o c) v in =5.0v v in =3.3v -40-20 0 20406080 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 for ap2822c/d current limit (a) ambient temperature ( o c) v in =5.0v v in =3.3v
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) figure 12. current limit vs. supply voltage figure 13. current limit vs. ambient temperature figure 14. current limit vs. supply voltage figure 15. current limit vs. ambient temperature -40-20 0 20406080 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 current limit (a) ambient temperature ( o c) v in =5.0v v in =3.3v for ap2822g/h 3.0 3.5 4.0 4.5 5.0 5.5 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 for ap2822g/h current limit (a) supply voltage (v) t a =-40 o c t a =25 o c t a =85 o c 3.0 3.5 4.0 4.5 5.0 5.5 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 for ap2822e/f current limit (a) supply voltage (v) t a =-40 o c t a =25 o c t a =85 o c -40-20 0 20406080 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 for ap2822e/f current limit (a) ambient temperature ( o c) v in =5.0v v in =3.3v
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 13 typical performance characteristics (continued) figure 16. uvlo voltage vs. ambient temperature figure 17. flag delay time during over current vs. ambient temperature figure 18. flag delay time during over current figure 19. output short to gnd current vs. supply voltage vs. supply voltage -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 ambient temperature ( o c) enable active v in rising v in falling under voltage lockout threshold voltage (v) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 5 6 7 8 9 10 11 12 13 14 15 v in =5v enable active flag delay time during over current (ms) ambient temperature ( o c) 3.0 3.5 4.0 4.5 5.0 5.5 6 8 10 12 14 supply voltage (v) t a =25 o c v in =5v enable active flag delay time during over current (ms) 3.0 3.5 4.0 4.5 5.0 1.00 1.02 1.04 1.06 1.08 1.10 1.12 1.14 1.16 1.18 1.20 1.22 1.24 1.26 1.28 1.30 for ap2822 e/f/g/h supply voltage (v) output short to gnd current (a) v in =5v enable active
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 14 typical performance characteristics (continued) figure 20. output short to gnd current figure 21. enable threshold voltage vs. ambient temperature vs. ambient temperature figure 22. enable threshold voltage figure 23. output turn on and rise time vs. supply voltage (c in =1.0 f, c out =1.0 f, no load) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.0 1.1 1.2 1.3 1.4 1.5 for ap2822 e/f/g/h ambient temperature ( o c) output short to gnd current (a) v in =5v enable active -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 v enh v enl ambient temperature ( o c) v in =5v enable threshold voltage (v) 3.0 3.5 4.0 4.5 5.0 5.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 supply voltage (v) v enh v enl t a =25 o c enable threshold voltage (v) v en 5v/div i inrush 20ma/div v out 1v/div time 500 s/div
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 15 typical performance characteristics (continued) figure 24. output turn on and rise time figure 25. output turn on and rise time (c in =1.0 f, c out =1.0 f, r l =3.3 ) (c in =1.0 f, c out =100 f, no load) figure 26. output turn off and fall time figure 27. output turn off and fall time (v in =5v, c in =1.0 f, no load) (v in =5v, c in =1.0 f, c out =470 f, r l =3.3 ) v en 5v/div i inrush 1a/div time 500 s/div time 500 s/div time 5ms/div time 500 s/div v out 1v/div v en 5v/div i inrush 1a/div v out 1v/div v en 5v/div v out 1v/div v en 5v/di v v out 1v/div c out =100 f c out =22 f c out =1 f c out =470 f c out =220 f i out 1a/div
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 16 typical performance characteristics (continued) figure 28. output short to gnd current figure 29. flag response during over current (v in =5v, c in =1.0 f) figure 30. flag response during over temperature (t a =125 oc) v en 5v/div i out 1a/div time 20ms/div time 5ms/div v out 1v/div v flag 1v/div i out 1a/div v out 1v/div time 5ms/div v flag 1v/div i out 1a/div v out 1v/div
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 17 typical application c in (note2) 2.2f vin vout flag gnd ap2822 en v in =5v enable usb controller v bus gnd d+ d- c out 1f r 10k ? 1(3)[3] 2(2){2}[2] 3(1){4}[4] 4(4){3}[5] 5(5){1,5}[1] a(b){c}[d] a: sot-23-5(k package) b: sot-23-5(ka package) c: sot-23-5(kb package) d: sot-23-5(ke package) note 2: 2.2f input capacitor is enough in most application cases. if the vout is short to ground frequently during usag e, large size input capacito r is necessary, recommend 22f. figure 31. typical application of ap2822
preliminary datasheet 0.5a to 2.0a high-side power distribution switches ap2822 dec. 2012 rev 1. 1 bcd semiconductor manufacturing limited 18 mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 8 0 3.020(0.119) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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